Abstract

We present a thorough investigation of the random telegraph noise scaling trend for both NAND and NOR floating-gate flash memories, including experimental and physics-based modeling results. The statistical distribution of the random telegraph noise amplitude is computed using conventional 3D TCAD simulations, establishing a direct connection with cell parameters. The analysis results in a simple formula for the random telegraph noise amplitude standard deviation as a function of cell width, length, substrate doping, tunnel oxide thickness and drain bias. All the simulation results are in good agreement with experimental data and are of utmost importance to understand the random telegraph noise instability and to control it in the development of next generation flash technologies.

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