Abstract
An extensive on-wafer experimental campaign is performed to extract the thermal resistance of state-of-the-art toward-THz silicon germanium bipolar transistors designed and developed within the European DOTFIVE project. The dependence of this critical parameter on scaling, as well as on the emitter layout, is carefully evaluated, and the resulting junction temperatures are determined.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
