Abstract
A new emitter finger layout in SiGe HBT to reduce thermal-coupling is presented in this study. By redistributing the emitter fingers of various SiGe HBTs, the thermal resistance reduces significantly from 133 to 88K/W under room temperature. Thus, in dc performance, output conductance increases from −2.0 to −1.6mA/V. In ac performance, the fMAX shows an improvement over 10%. In power performance, the linear power gain, P1dB and PAEatP1dB increase by 0.5dB, 1.5dB and 6.2% at 1.8GHz, respectively.
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