Abstract
Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel
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https://doi.org/10.1109/led.2023.3347719
Journal: IEEE Electron Device Letters | Publication Date: Mar 1, 2024 |
Citations: 1 |
Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel
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