Scalable p-i-n Diode Modeling and Parameter Extraction for Use in the Design of W-Band GaAs Switch

Abstract

Scalable modeling and parameter extraction of the millimeter-wave GaAs-based p-i-n diode for <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">W</i> -band switch design are presented in this article. A direct-extraction method based on the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</i> -parameters on-wafer measurement is utilized to determine the extrinsic and intrinsic model parameters without any de-embedding test structures. Under turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> bias conditions, the modeled input reflection coefficients agree well with the measured data in the entire frequency ranges for GaAs-based p-i-n diode. The scalable normalization rules have been used to design <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">W</i> -band p-i-n diode switch successfully; good agreements are obtained between the simulated and measured data to verify the accuracy of the proposed model.