Abstract
The technique described for measuring and identifying the static parameters of a semiconductor diode is based on the decomposition and simplification of the equations of the model of the diode so as to reduce the number of dimensions of space, thus optimizing the target function. The technique takes account of just the physical principles by which the semiconductor diode functions. A manufacturer can generate the most exact SPICE models of a diode of various degrees of complexity by taking account of the technological norms and the salient features of the technology.
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