Abstract
Arrays of nanoscale pyramidal cages embedded in a silicon nitride membrane are fabricated with an order of magnitude miniaturization in the size of the cages compared to previous work. This becomes possible by combining the previously published wafer-scale corner lithography process with displacement Talbot lithography, including an additional resist etching step that allows the creation of masking dots with a size down to 50 nm, using a conventional 365 nm UV source. The resulting pyramidal cages have different entrance and exit openings, which allows trapping of nanoparticles within a predefined size range. The cages are arranged in a well-defined array, which guarantees traceability of individual particles during post-trapping analysis. Gold nanoparticles with a size of 25, 150, and 200 nm are used to demonstrate the trapping capability of the fabricated devices. The traceability of individual particles is demonstrated by transferring the transmission electron microscopy (TEM) transparent devices between scanning electron microscopy and TEM instruments and relocating a desired collection of particles.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
