Sb-modified growth of stacked Ge/Si(100) quantum dots

Abstract

We report on the Sb induced modifications of the morphology of self assembled Ge/Si(100) quantum dot stacks in a Si matrix grown by a molecular beam epitaxy. It is shown that the size of the quantum dots in the stack and the Si spacer layer uniformity inside the stack are regulated by the amount of deposited Sb. We consider the thin Sb layer at the Ge/Si growth interface as a factor limiting the surface migration of Si and Ge ad-atoms. The surface diffusion coefficients of Si ad-atom on uncovered pyramid shaped Ge island and on a Ge island covered by a single monolayer of Sb are estimated to be 2.4μm2s−1 and 2.3×10−4μm2s−1 at a temperature of 600°C, correspondingly. Based on this remarkable reduction of surface diffusion the morphology of the surface can be preserved when the growth is continued after the single monolayer of Sb is at the surface.