Abstract
AbstractSb adsorption processes on In/Si(111) √3 × √3 and √31 × √31 surfaces were investigated in the present work. The dynamic growth behavior was observed with low energy electron microscopy (LEEM), and the local surface structure change was monitored with selected area low energy electron diffraction (LEED). X‐ray generated photo emission electron microscopy using synchrotron radiation (SR‐XPEEM) was employed in order to see the variation of the chemical state on the surface. On both √3 × √3 and √31 × √31 surfaces, Sb adsorption induces the surface structural change and modifies the chemical interaction of In atoms with Si. In atoms are replaced by impinged Sb atoms, and the discharged In atoms form islands. Copyright © 2006 John Wiley & Sons, Ltd.
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