SAW analysis of the Mg/sub X/Zn/sub 1-X/O/SiO/sub 2//Si system

H Wu,Y Chen,Y Lu,P Wu,N.W Emanetoglu,J Zhu,G Saraf

doi:10.1109/ultsym.2003.1293105

H Wu, Y Chen + Show 5 more

https://doi.org/10.1109/ultsym.2003.1293105

Copy DOI

Export

Save

Cite

Abstract
Full-Text
Similar Papers

Abstract

Listen

Magnesium zinc oxide (Mg/sub x/Zn/sub 1-x/O) is a new piezoelectric material formed by alloying ZnO and MgO. In this study, the SAW velocity dispersion and electromechanical coupling coefficients (K/sup 2/) in the Mg/sub x/Zn/sub 1-x/O (x=0-30%)/SiO/sub 2//Si system is analyzed using the transfer matrix method. Si is chosen as the substrate for potential integration of SAW device with the main stream integrated circuits technology. The use of different Mg content in Mg/sub x/Zn/sub 1-x/O films leads to change in piezoelectric properties. The SAW characteristics of the system can be further tailored by varying the thickness ratio between the Mg/sub x/Zn/sub 1-x/O and SiO/sub 2/ layers. The effect of different Mg/sub x/Zn/sub 1-x/O to SiO/sub 2/ thickness ratios on SAW propagation in the multilayer structure is investigated. Four possible multilayer SAW device configurations, including IDT/ Mg/sub 2/Zn/sub 1-x/O/SiO/sub 2//Si, Mg/sub x/Zn/sub 1-x/O /IDT/SiO/sub 2//Si, IDT/Mg/sub x/Zn/sub 1-x/O/ metal ground plane/ SiO/sub 2//Si, and metal ground plane/ Mg/sub x/Zn/sub 1-x/O O/IDT/SiO/sub 2//Si, are studied. It is found that at the high frequency range, with each 10% increase of the Mg content in the Mg/sub x/Zn/sub 1-x/O, SAW velocity increases by 5/spl sim/8%, whereas K/sup 2/ decreases by around 30%. With same IDT configuration, V/sub SAW/ decreases as SiO/sub 2/ layer thickens. However, as Mg/sub x/Zn/sub 1-x/O thickness-frequency products hf reach high values, the SAW energy for the base wave mode is trapped in the Mg/sub x/Zn/sub 1-x/O layer and the thickness of SiO/sub 2/ no longer affects the SAW propagation. The multilayer configurations also play an important role. It is found that the Mg/sub x/Zn/sub 1-x/O /IDT/SiO/sub 2//Si configuration with Mg/sub x/Zn/sub 1-x/O: SiO/sub 2/ yields the highest coupling coefficient (x=0) and the highest SAW velocity (x=0.3). The current study indicates that using Mg/sub x/Zn/sub 1-x/O -based multilayer structures will provide flexibility in SAW device design as well as the ability to tailor SAW properties.

Full Text