Abstract
This study, a thermal method for erasing and permanently destroying data stored in flash memory fabricated on a suspended silicon nanowire is demonstrated. An intentionally applied heat treatment is used to erase the data stored in the charge trap layer of the flash memory. The data destruction is verified and analyzed at a unit cell level as well as in a commercial off‐the‐shelf chip. Characteristics of memory performance and reliability are also investigated. Then, the feasibility of the proposed method is further evaluated for next generation 3‐dimensional V‐NAND.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
