Abstract
We studied the growth of InGaAs nanowires on InP(1 1 1)B substrates by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We proposed a growth model of InGaAs nanowires based on the observation of growth under various condition. We investigated the composition of InGaAs nanowires using micro-photoluminescence and confirmed the relation between composition of InGaAs nanowires and the growth rate.
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