S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

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Reliability studies are fundamental to optimize the use of new emerging technologies such as AlGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using AlGaN/GaN HEMT in real operating conditions for radar applications. Three pulsed-RF long aging tests (8000 h/11,000 h total) are performed under different conditions of (Vds), Temperature, gain compression and Duty cycle. A following of various degradation indicators during the aging tests is presented (Pout, Ids, Igs, Rds(on), Gm and Vth). This study will contribute to establish a new reliability prediction model of GaN devices and update the FIDES guide.