Abstract
Theoretical computations of Rydberg energy levels series and atomic lifetimes for singly ionized boron (B II), silicon (Si II), and germanium (Ge II) have been performed. In the theoretical computation weakest bound electron potential model theory (WBEPMT) is employed. Regularities of changes in quantum defects for the following Rydberg states series: 2sns (1S0), 2snp ([Formula: see text]), 2snf ([Formula: see text], [Formula: see text], [Formula: see text]), 2snf ([Formula: see text]) of B II; 3s2ns (2S1/2), 3s2nd (2D3/2,5/2), 3s2nf ([Formula: see text]), 3s2ng (2G7/2,9/2) of Si II; and 4s2nf ([Formula: see text]), 4s2nf ([Formula: see text]), 4s2ng (2G7/2,9/2) of Ge II, up to n = 50 are presented. The atomic lifetimes of the following series: 1s22sns (1S0), 1s22snp ([Formula: see text]), 1s22snd (1D2) of B II; 3s2ns (2S1/2), 3s2nf ([Formula: see text]) of Si II; and 4s2ns (2S1/2) of Ge II are predicted with good accuracy. Some high-lying Rydberg energy levels and atomic lifetimes have been presented for the first time. The series for which Rydberg energy levels are computed in this work are unperturbed series.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
