Rutherford backscattering and channelling studies of erbium implanted SIMOX structures

Abstract

The behaviour of 250 keV 166Er + implanted into SIMOX structures has been investigated by Rutherford backscattering and channelling analysis. The implantation doses were 1.5 ×10 14 cm −2 and 1.5 × 10 15 cm −2. Both conventional furnace and rapid therm annealing were carried out in the temperature range 600°C–1100°C. Regrowth of the amorphized silicon and redistribution of the erbium were found to be strongly influenced by the status of the damaged layer. Different regrowth processes of the completely damaged silicon overlayer were suggested respectively for conventional furnace and rapid thermal annealing. It is found that the regrowth rate increases rapidly when the temperature is higher than 900° C in both cases. The redistribution of the erbium atoms was controlled by the regrowth boundary between the damaged and the recrystallized silicon.