Abstract
Ge2Sb2Te5 (GST) as phase-change material has the advantage of good thermal stability and long cycle life, however large power consumption and lower phase change speed partly limit large-scale application for phase-change materials (PCM). In this paper, a comprehensive research is investigated on Ru doped GST phase-change material, from properties to performances for PCM application. Ru doping can efficiently improve the thermal stability of GST alloy and the thickness change of Ru0.05(GST)0.95 film is 3.3%. In addition, high 10-year data retention temperature (∼151 °C) and small crystal grain reflect the advantages of data retention and low power consumption for Ru0.05(GST)0.95 film. Furthermore, the structure characteristics show the stable face-centred cubic structure at crystalline state after annealing. As for electrical properties, Ru0.05(GST)0.95-based PCM cell shows excellent reversible SET-RESET properties with a suitable operation window and good endurance up to 106 electrical cycles with a resistance ratio of about 10. And also, it has a dramatically lower power consumption of 1.46 × 10-11 J compared with GST-based cell (4.76 × 10-10 J), making it a promising material for the Internet of Things (IOT) field applications.
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