RTP Modeling for CVD and Thermal Oxidation

Abstract

ABSTRACTA methodology for predicting the spatial and temporal distribution of film thickness is given for Chemical Vapor Deposition (CVD), and for thermal oxidation in Rapid Thermal Processor (RTP) systems, e.g. RTPCVD and RTO. The methodology is based on a wafer thermal model for the heat transfer to, from and within the wafer, a geometric ray trace algorithm to predict the radiant heat transfer from the lamps and reflectors to the wafer, a process model for the deposition or oxidation, and a gas flow model to predict the flow field in the RTP chamber. The CVD process is based on the Arrhenius deposition model, and thermal oxidation is based on a parallel diffusion model. The methodology has been validated by comparison of measured and predicted final film thickness from a cylindrical RTP system. The methodology is based on physical principles, with a minimum reliance on empirical relations and experimental data. As such it can be used for optimization of existing RTP designs and for the evaluation of proposed RTP configurations, such as new or novel lamp, reflector or chamber geometry.