A methodology for analysis of RTCVD systems

Abstract

A methodology for predicting the spatial and temporal distribution of film thickness is given for low pressure chemical vapor deposition (LPCVD) in rapid thermal processor (RTP) systems. The methodology is based on a model for the heat transfer to, from, and within the wafer, a geometric ray trace algorithm to predict the radiant heat transfer from the lamps and reflectors to the wafer, a deposition model for the deposited film thickness, and an optical properties model that gives the wafer absorptivity and emissivity. The modeling is for low pressure processes, where gas flow effects are secondary, and concentrates on the radiant heat transfer to and from the wafer. The methodology is based on physical principles, with a minimum reliance on empirical and experimental data, and has been validated by comparison with deposited films from a cylindrical RTP system. >