Abstract

Resistive switching memory (RRAM) is considered as one of the most promising devices for parallel computing solutions that may overcome the von Neumann bottleneck of today’s electronic systems. However, the existing RRAM-based parallel computing architectures suffer from practical problems such as device variations and extra computing circuits. In this work, we propose a novel parallel computing architecture for pattern recognition by implementing k-nearest neighbor classification on metal-oxide RRAM crossbar arrays. Metal-oxide RRAM with gradual RESET behaviors is chosen as both the storage and computing components. The proposed architecture is tested by the MNIST database. High speed (~100 ns per example) and high recognition accuracy (97.05%) are obtained. The influence of several non-ideal device properties is also discussed, and it turns out that the proposed architecture shows great tolerance to device variations. This work paves a new way to achieve RRAM-based parallel computing hardware systems with high performance.

Highlights

  • Architecture is simple with no need for weight computing circuits

  • TiN/HfOx/AlOx/Pt RRAM arrays with remarkable characteristics are used in this work

  • RRAM arrays computes the outputs of a similarity function in parallel

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Summary

Introduction

Architecture is simple with no need for weight computing circuits. For the first time, the implementation of kNN algorithm on RRAM arrays is proposed. The proposed architecture consists of attribute signal sources, RRAM crossbar arrays, example detectors, class detectors, threshold controllers and row voltage controllers. RRAM arrays computes the outputs of a similarity function in parallel.

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