Abstract
A superlattice sample consisting of 200 alternating 5 nm layers of GaAs and Al0.45Ga0.55As was analyzed to explore some of the factors affecting depth resolution in rotational depth profiling by AES, including coincidence of sample rotation and probe beam axes, stability of analysis position and probe beam current density. Because of the periodic nature of the layers involved, it was possible to detect very small (< 2 nm) changes in surface topography. A mathematical model is proposed which explains the unusual features observed in the AES profile.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call