Abstract
Single-crystal Si single quantum well (SQW) structures sandwiched between two SiO2 layers were fabricated using oxygen implantation followed by thermal oxidation. After annealing in hydrogen, the SQW structures emitted two-peak (blue and yellow) photoluminescence (PL) at room temperature. The blue PL (∼2.9 eV) has an invariable peak position regardless of the Si layer thickness or the temperature. The yellow PL changes from 2.0 eV to 2.6 eV with thinning of the Si layer from 5.5 to 1.0 nm. We found that yellow PL disappears at temperatures below 160 K. It is concluded that the blue PL is related to defects in SiO2, and we inferred that the yellow PL is caused by a recombination of the localized electrons at the Si/SiO2 interface and quantum confined holes.
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