Room-temperature pulsed operation of triple-quantum-well GaInNAs lasers grown on misoriented GaAs substrates by MOCVD

Abstract

The lasing operation of three-quantum-well GaInNAs stripe geometry lasers grown by MOCVD on 0/spl deg/ and 6/spl deg/ misoriented [100] GaAs substrates, respectively, have been demonstrated and their performance is compared for the first time. Both devices achieved room temperature, pulsed lasing operation at an emission wavelength of 1.17 μm, with a threshold current density of 667 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for lasers grown on 6/spl deg/ misoriented substrates, and 1 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for lasers grown on 0/spl deg/ misoriented substrates. The threshold for the lasers grown on 6/spl deg/ misoriented substrates compares favorably with the best results for GaInNAs lasers. Lasers with narrower stripe width and a planar geometry have also been demonstrated by the use of lateral selective wet oxidation for current confinement, with a threshold current density of 800 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for 25-μm-wide devices.