Abstract
Room-temperature pulsed laser operation of (Al0.3Ga0.7)0.5In0.5P/ Ga0.5In0.5P/ (Al0.3Ga0.7)0.5In0.5P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved for the first time. The lowest threshold current density was 26 kA/cm2 for a diode with a 22-μm-wide and 160-μm-long stripe. The lasing wavelength was 0.683 μm.
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