Abstract
Room-temperature pulsed laser operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved. Threshold current densities as low as 1.2 kA/cm2 have been attained in totally internally reflecting devices. In broad-area Fabry-Perot diodes, threshold current densities as low as 3 kA/cm2 have been attained. These lasers are fabricated from five-layer epitaxial structures grown entirely by the MO-CVD process.
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