Abstract
The spectral responsivity for Schottky photodiodes based on the GaNxAs1−x alloys synthesized using nitrogen (N) ion implantation followed by pulsed-laser melting and rapid thermal annealing is presented. An N-induced redshift up to 250 meV (180 nm) in the photocurrent onset energy (wavelength) is observed. The N concentration dependence agrees with the values measured by photomodulated reflectance and ballistic electron emission microscopy, and with the calculation by the band anticrossing model for the splitting of the conduction band in GaNxAs1−x.
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