Abstract
Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra in heavily n-doped GaAs were compared. It was found that for highly degenerate semiconductors the critical energy measured by the PR equals to the peak energy of the PL spectrum. When Fermi level lies below the conduction-band minimum, the PR spectra revealed the band-gap energy as well as the energy Emax at which the electron concentration per unit energy in the donor band becomes maximum, and this maximum was observed to merge in the conduction-band at about 3×1017 cm−3 electron concentration.
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