Abstract
Room-temperature optically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) were demonstrated by laser lift-off. A VCSEL was fabricated by combining a GaN-based cavity with two dielectric distributed Bragg reflectors: SiO2/TiO2 and SiO2/Ta2O5. The Q factor of the VCSEL is 518 indicating a good interfacial layer quality of the structure. The laser emits blue-violet wavelength light at 414 nm under optical pumping at room temperature with a threshold pumping energy of 270 nJ. The laser emission has a narrow linewidth of 0.25 nm and a degree of polarization of 70%. The laser emission patterns clearly indicate a vertical lasing action of the VCSEL.
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