Abstract
Injection-type 1.5 μm light-emitting diodes (LEDs) with Er,O-codoped GaAs (GaAs:Er,O) have been fabricated by organometallic vapor phase epitaxy (OMVPE). Electroluminescence (EL) spectrum from the LEDs under forward bias at room temperature was dominated by the luminescence due to an Er-20 center, an Er atom located, at the Ga sublattice with two adjacent 0 atoms, indicating that injected carriers contribute effectively to the excitation of the Er-20 center. The current density dependence of EL properties revealed an extremely large excitation cross section (approximately 10 - 1 5 cm 2 ) of Er ions by current injection. GaInP/GaAs:Er,O/GaInP double-heterostructure (DH) LEDs have also been fabricated. The saturated EL intensity significantly increased with increasing GaAs:Er,O active-layer thickness.
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