The effect of gamma irradiation and forward bias on the 76 K electroluminescence spectrum of GaP:Zn,O

Abstract

Both the effects of gamma irradiation and high-current forward bias on the low temperature electroluminescence (EL) spectra of GaP:Zn,O light emitting diodes (LEDs) have been studied by measuring constant current (1 mA) 76 K EL spectra below 1000 nm. The LEDs were divided into two sets: a control set which was subjected only to forward bias, and a set exposed to gamma irradiation and forward bias. The EL spectra reveal the growth of sharp, bound exciton emission bands (Z lines) in the range 580 nm to 620 nm following extended high current bias at 300 K of irradiated LEDs and, more weakly, in control LEDs which show pre-bias evidence of these lines. The emergence of these lines is tenatively associated with the recombination-enhanced motion of a defect, possibly the Zn interstitial, which can be introduced by irradiation and is sometimes present in unirradiated LEDs.