Abstract
In this paper, gas sensing characteristics of Boron-doped graphene oxide(B-GO) are presented firstly. In order to detect the optimal value of boron doping, different amounts of boron (5-30 wt%) are adopt in the doping process. The results of sensing test revealed that at room temperature (20 °C) and humidity (30%), 15 wt% B-GO has the optimal sensitivity to NH3. Meanwhile, the detection response and recovery time of B-GO gas sensor to NH3 are relatively short. Theoretical models of graphene and B-doped graphene are established, and energy change in the gas-adsorption of NH3 on the graphene oxide or B-doped graphene oxide is calculated. The enhanced sensing performance was ascribed to the B-doping and the formation of chemical bonds between boron and NH3.
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