Abstract
There is considerable interest in the development of InAsSb-based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility, and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong nonradiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multiquantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature. The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron-hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, while the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.
Highlights
I nAsSb nanowires (NWs) have great potential for technologically important applications in nanoscale and quantum devices.[1−3] most early work has focused on exploiting the transport properties of NWs for electronics,[4] their application to photonics promises many transformational advantages
Structural studies of InAs NWs have reported that the wurtzite (WZ) crystal phase dominates and the addition of Sb drives a change to a zinc-blende (ZB) phase.[10,11]
While lowtemperature photoluminescence (PL) has been observed from InAs NWs up to 130 K,11,12 achieving emission at room temperature is vital for realizing practical applications
Summary
In our MQW NWs the InAsSb growth was limited to nanoscale QWs and energy dispersive X-ray spectroscopy (EDXS) mapping revealed preferential incorporation of the Sb on specific crystal planes A strong blue shift was observed with increasing excitation power which is characteristic of type II QWs and is due to electron charging in triangular quantum wells formed at the interfaces This substantially improves the electron−hole wave function overlap, increasing from approximately 40% to 70%, while providing Auger suppression resulting in enhanced PL emission which persists up to room temperature. They will be able to exploit the advantages of site controlled NWs including on-chip silicon integration and enhance light-mater coupling based on their dimensions and geometry, opening the way for a wide range of applications
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