Abstract
The authors report the device characteristics of GaInSb∕AlGaSb quantum well (QW) lasers monolithically grown on GaAs substrates. The 7.8% lattice mismatch between GaAs substrates and GaSb buffer layers can be completely accommodated by using an interfacial misfit (IMF) array. Room-temperature lasing operation is obtained from a 1.25-mm-long device containing six-layer Ga0.9In0.1Sb∕Al0.35Ga0.65Sb QWs at 1.816μm with a threshold current density of 1.265kA∕cm2. The observed characteristic temperature and temperature coefficient are 110K and 9.7Å∕K, respectively. This IMF technique will enable a wide range of lasing wavelengths from near-infrared to midwavelength-infrared regimes on a GaAs platform.
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