Abstract
We demonstrated room-temperature (RT) intense ultraviolet (UV) emission with wavelength in the range of 300–340 nm from Inx1Aly1Ga1−x1−y1N/Inx2Aly2Ga1−x2−y2N multiple-quantum wells (MQWs) fabricated on SiC by metalorganic vapor phase epitaxy. We found that the UV emission is considerably enhanced upon introducing approximately 5% of In into AlGaN. Maximally efficient emission was obtained at 318 nm from the fabricated In0.05Al0.34Ga0.61N/In0.02Al0.60Ga0.38N three-layer MQW when the QW thickness was approximately 1.4 nm. The intensity of 320 nm band emission from the InAlGaN-based MQWs was as strong as that of 410 nm band emission from InGaN-based QWs at RT. We observed emission fluctuations of submicron size in cathode luminescence images of Inx1Aly1Ga1−x1−y1N/Inx2Aly2Ga1−x2−y2N single QW which might be due to In segregation effect. The temperature dependence of photoluminescence emission for InAlGaN-based QWs was greatly improved in comparison with that of GaN- or AlGaN-based QWs.
Published Version
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