Abstract
Sn0:897Co0:10Al0:003O2 diluted magnetic semiconductor films were grown on (100) silicon substrate by magnetron sputtering and then annealed at 300 � C and 500 � C for 1.5 h, respectively. Room temperature ferromagnetism was observed for the as-deposited film. The saturation magnetization (Ms) decreases as annealing temperature increases, and the value of Ms for the films annealed at 500 � C is about half of the value for the as-deposited films. The electrical resistivity of Sn0:897Co0:10Al0:003O2 drops in a range of 10 6 to 10 � � m with increasing the annealing temperature. The XRD and HRTEM investigation illustrates that no impurity phase and Co clusters exist in the films, indicating the ferromagnetism of the films is intrinsic. The F-center-mediated exchange model is adopted to explain the room-temperature ferromagnetism of the films. [doi:10.2320/matertrans.M2009373]
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