Abstract
Room temperature (RT) ferromagnetism (FM) was achieved in H2/N2 annealed Co-doped ZnO films on silicon substrates and we got annealing temperature, Tan, dependence of saturation magnetization, Ms, which increased and finally reached a maximum as Tan elevated. The curve of Ms versus Tan seems like three steps. Surprisingly, after sequential oxygen annealing, Ms of each annealed film decreased abruptly at first, and then restored to its original order after the second annealing, which may owe to the formation of zinc-blende ZnO during thermal oxidation. This experiment illustrated that room temperature ferromagnetism in Co-doped ZnO films is associated with multiple factors.
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