Abstract
Ferromagnetic Mn-doped In0.05Ga0.95As and GaAs0.95Sb0.05 nanowires were synthesized by chemical vapor transport and their Mn concentration wasabout 2%. The Mn doped homogeneously into both the single-crystalline zinc blendeInGaAs and GaAsSb without the formation of metal clusters. X-ray magnetic circulardichroism and magnetic moment measurements revealed their distinctive room-temperatureferromagnetic behaviors. While the incorporation of In enhances the ferromagnetism, thatof Sb reduces it, which can be ascribed to the increase or decrease of the dopant–acceptorhybridization. These GaAs-based NWs exhibit an efficient terahertz emission atroom temperature, due to a strong local field enhancement by coherent surfaceplasmons. The Mn doping significantly enhances the intensity and bandwidth ofthe terahertz emission, with an excellent correlation with their magnetization.
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