Abstract
We have grown GaN films on MgAl2O4(111) substrates at room temperature (RT) and investigated the structural properties of the films. The atomically flat surfaces of MgAl2O4 with a step and terrace structure are obtained by annealing at 1000 °C in a box made of ceramic MgAl2O4. It is found that GaN(0001) grows epitaxially on atomically flat MgAl2O4(111) surfaces even at RT. The epitaxial relationship between the GaN epilayer and the MgAl2O4 substrate is GaN[1120]∥MgAl2O4[011]. GaN films have a clear six fold symmetry without 30° rotational domains. The interfacial reaction between GaN and MgAl2O4 is completely suppressed in the case of RT growth.
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