Abstract
The room-temperature continuous-wave operation of a 1.5λ-cavity GaN-based vertical-cavity surface-emitting laser with an n-type conducting AlInN/GaN distributed Bragg reflector (DBR) was achieved. A peak reflectivity of over 99.9% was obtained in the n-type conducting AlInN/GaN DBR so that the current was injected through the DBR for the operation. The threshold current was 2.6 mA, corresponding to the threshold current density of 5.2 kA/cm2, and the operating voltage was 4.7 V. A lasing spectrum with a peak wavelength of 405.1 nm and a full-width at half maximum of 0.08 nm was also observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
