Abstract
Room-temperature atomic layer deposition (ALD) of ZrO2 is developed with tetrakis(ethylmethylamino)zirconium (TEMAZ) and a plasma-excited humidified argon. A growth per cycle of 0.17nm/cycle at room temperature is confirmed, and the TEMAZ adsorption and its oxidization on ZrO2 are characterized by IR absorption spectroscopy with a multiple internal reflection mode. TEMAZ is saturated on a ZrO2 surface with exposures exceeding ∼2.0×105 Langmuir (1Langmuir=1.0×10−6Torrs) at room temperature, and the plasma-excited humidified argon is effective in oxidizing the TEMAZ-adsorbed ZrO2 surface. The IR absorption spectroscopy suggests that Zr-OH works as an adsorption site for TEMAZ. The reaction mechanism of room-temperature ZrO2 ALD is discussed in this paper.
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