Abstract
We report room temperature injection lasing in the yellow-orange spectral range (599-605 nm) in (AlxGa1-x)0.5In0.5P-GaAs diodes with 4 layers of tensile-strained InyGa1-yP quantum dot-like insertions. The wafers were grown by metal-organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7-10 kA/cm2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.
Highlights
A variety of modern applications requires compact low–cost wavelength–adjustable or wavelength–tunable coherent light sources emitting in the deep green, yellow and bright red spectral ranges
Abstract: We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensilestrained InyGa1–yP quantum dot-like insertions
The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the direction with respect to the (100) surface
Summary
A variety of modern applications requires compact low–cost wavelength–adjustable or wavelength–tunable coherent light sources emitting in the deep green, yellow and bright red spectral ranges. It was reported that (In,Ga,Al)P light–emitting diodes grown on high– index GaAs substrates inclined from (100) towards –crystallographic direction and containing tensile strained ultrathin GaP insertions showed an improved intensity of the electroluminescence at room temperature in the green spectral range of ~568 nm [19] as compared to (100)–grown devices [17, 18]. We note that the possibility to realize room temperature lasing in the yellow spectral range (586 nm) by optical pumping was demonstrated already in 1994 [12], once efficient heat dissipation could be provided. In the present paper we demonstrate a further significant advance towards yellow and green spectral range allowing 600 nm lasing wavelength in broad area devices
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