Abstract
We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44×103 with an ultralow modal volume of the order of 1.2(λ/n)3, inducing an enhancement in the spontaneous emission rate of up a factor of 2.8 at 300 K.
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