Abstract
Room-temperature pulsed operation of a GaxIn1−xAsyP1−y/Gax'In1−x'Asy'P1−y' double-heterostructure visible injection laser diode is reported. The laser diode is grown by liquid-phase epitaxy on (100) GaAs, and the active layer is grown by a two-phase-solution technique. The threshold current density is 16 kA/cm2 for the laser diode lasing at about 721 nm at room temperature.
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