Abstract
Bi3.95Er0.05Ti3O12 (BErT) thin films were prepared on Pt/Ti/SiO2/Si and indium-tin-oxide (ITO)-coated glass substrates at room temperature by pulsed laser deposition. These thin films were amorphous with uniform thickness. Excellent dielectric characteristics have been confirmed. The amorphous BErT thin films deposited on the Pt/Ti/SiO2/Si and ITO-coated glass substrates exhibited almost the same dielectric constant of 52 with a low dielectric loss of less than 0.02 at 1 kHz. Meanwhile, the dielectric properties of the thin films had an excellent bias voltage stability and thermal stability. The amorphous BErT thin films might have potential applications in microelectronic and optoelectronic devices.
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