Abstract
Self-organized In0.2Ga0.8As/GaAs quantum wires (QWRs) grown on a (221)A GaAs substrate by molecular beam epitaxy (MBE), which has the narrowest linewidth of photoluminescence peak among self-organized QWRs reported so far, have been applied to an active region of a graded-index separate confinement heterostructure laser structure. Since Si is not a good n-type dopant for (221)A GaAs in the MBE growth, a Sn-doped GaAs/AlAs superlattice layer was used for an n-type cladding layer. The laser operated at room temperature at an emission wavelength of 894 nm under pulsed current conditions with a threshold current of 182 mA (the threshold current density of 2.8 kA/cm2). This result indicates that (221)A InGaAs/GaAs QWRs have sufficient quality for laser devices.
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