Much improved self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy

Abstract

A self-organized In0.53Ga0.47As/(In0.53Ga0.47As)2(In0.44Al0.56As)2 quantum wire (QWR) laser was grown on a (775)B InP substrate by molecular beam epitaxy (MBE). Well lattice-matched and flat cladding layers were grown at a rather high temperature (595° C). Lateral confinement potential was induced by a nano-meter scale interface corrugation of InGaAs/(InGaAs)2(InAlAs)2 with an amplitude of 2 nm and a period of 40 nm. A 50 µm × 500 µm stripe-contact QWR laser with uncoated cleaved mirrors oscillated with a threshold current density (Jth) of 1.2 kA/cm2 and a lasing wavelength of 1370 nm at 250 K under pulsed current condition.