Abstract
The first successful room-temperature pulsed operation is reported of InGaAs strained layer multiquantum well (SLMQW) injection lasers grown by MOVPE on InP substrates in the 1.8 μm range. The threshold current density and the external differential quantum efficiency of the 10 μm wide ridge waveguide lasers were 2.5 kA/cm2 (cavity length = 1mm) and 5% (cavity length = 400μm), respectively. Broad-area lasers, 100 μm wide and 1 mm long, had a reverse leakage current of less than 10 μA at − 1V indicating high quality of the epitaxial layers.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call