Abstract
The first room temperature negative differential resistance in a nanometre-thick metal (CoSi2)/insulator (CaF2) resonant tunneling diode is reported. This device consists of heterostructures with two metallic (CoSi2) wells and three insulator (CaF2) barriers grown on n-Si(111) substrate. Peak-to-valley current ratios as high as 2 at 300K and 25 at 77K were obtained.
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