Abstract
Ladder hydrogen silsesquioxane (HSQ) has been proposed as a replication material to be used in nanoimprinting processes at room temperature. We replicated ladder-HSQ patterns by nanoimprinting at room temperature that were as accurate as replicated caged-HSQ patterns. Caged HSQ is the standard replication material currently used in nanoimprinting at room temperature. Caged-HSQ-imprinted patterns completely disappeared when annealed at 300 °C. However, ladder-HSQ-imprinted patterns retained almost the same rectangular profile as they had before annealing, even after being subject to high-temperature annealing at 1000 °C. Fourier transform infrared spectroscopy showed that high-temperature annealing transformed the HSQ into a SiOx structure. This vitrification of HSQ resin improved its dry-etching durability, with the dry-etching rate when subject to CHF3 reactive-ion etching decreasing from 32 to 27 nm/min, which is close to the value of 26 nm/min for thermally grown SiO2 and a quartz substrate.
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