Abstract
Room-temperature laser diodes which emit coherent infrared radiation near 1.1 μm have been prepared from InxGa1−xAs (x [inverted lazy s]0.23) vapor-grown p-n junction structures. At 77°K, laser threshold current densities as low as 1210 A/cm2 and external differential quantum efficiencies as high as 50% have been obtained at 1.08 μm. At 300°K, the threshold current densities are between 70 000 and 98 000 A/cm2 for emission at 1.145 μm.
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