Abstract
Epitaxial films of Ga1−xMnxN have been grown onc-sapphire substrates by low-pressure metal-organic vapour phaseepitaxy. The samples show ferromagnetic behaviour up to a temperatureof T = 380 K with hysteresis curves showing a coercivity of50–100 Oe. No ferromagnetic second phases and no significantdeterioration in crystal quality with the incorporation of Mn can bedetected by high-resolution x-ray diffraction. The result of x-rayabsorption near-edge structures indicates that Mn atoms substitute forGa atoms. The Mn concentrations of the layers are determined to reachx = 0.038 by proton-induced x-ray emission.
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